Speaker
Description
This study investigates the influence of graphene on the electrical characteristics of a magnesium/polyaniline/fluorine doped tin oxide (Mg/PANI/FTO) Schottky diode using a computational approach. Three device configurations are considered: (i) a reference structure without graphene, (ii) a structure incorporating graphene at the Mg-PANI interface., and (iii) a structure with graphene inserted between PANI and the FTO on glass substrate . The effects of temperature, graphene thickness, and doping concentration on key electrical parameters, namely reverse saturation current, barrier height, ideality factor, and series resistance, are systematically examined. Preliminary results, obtained over a temperature range of 273-353 K, reveal that the insertion of graphene at the metal/PANI interface significantly enhances recombination processes. This is evidenced by a reduction in the ideality factor from 3.83 to 3.17, accompanied by an increase in reverse saturation current from 0.0006 µA/µm to 0.17 µA/µm. The barrier height increases from 0.87 eV to 0.98 eV, while the series resistance decreases from 2 MΩ·µm to 0.14 MΩ·µm with increasing temperature. In contrast, the configuration with graphene positioned between PANI and the FTO substrate exhibits the lowest recombination effect among the three structures. This is reflected by the weak variation in ideality factor (from 1.01 to 1.02), a relatively controlled increase in reverse saturation current (from 10E-16 µA/µm to 10E-10 µA/µm), and a slight increase in barrier height (from 1.54 eV to 1.57 eV). Additionally, the series resistance decreases from 500 MΩ·µm to 20 MΩ·µm over the same temperature range. These findings indicate superior thermal stability for this configuration, as demonstrated by the weak temperature dependence of its electrical parameters. Overall, the results suggest that graphene, when strategically integrated at the PANI/substrate interface, not only mitigates recombination effects but also enhances device thermal stability. Furthermore, graphene shows strong potential as a passivation layer to reduce interfacial recombination between the hole transport layer (HTL) and the absorber layer in perovskite solar cell devices, where PANI is used as the HTL.
| Apply for student award at which level: | None |
|---|---|
| Consent on use of personal information: Abstract Submission | Yes, I ACCEPT |