Speaker
Description
Indium sulfide (〖In〗_2 S_3) is an intriguing semiconductor and has been extensively utilized as a
UV photodetector. In this study, we report the fabrication of gadolinium (Gd)-doped 〖In〗_2 S_3 thin films prepared via the nebulized spray pyrolysis technique (NSP). The X-ray diffraction (XRD) analysis confirms a cubic β- 〖In〗_2 S_3 phase, polycrystalline structure. Ultraviolet-visible (UV-Vis) spectroscopy confirms an enhancement in the UV absorption coefficient in doped films. Gd doping enhances the absorption capacity and the formation of oxygen vacancies in the host material. Photoluminescence (PL) spectroscopy revealed the presence of V_0 and V_s, and indium (𝑉 𝐼𝑛) vacancies. X-ray photoelectron spectroscopy (XPS) identified the presence of surface elements such as indium (In), sulfur (S), Gd, and vacancies, such as V_0 and V_s, hydroxyl ions (〖OH〗^-), and sulfate ions (〖SO〗_4^(2-)), as well as secondary phases including 〖Gd〗_2 O_2 S, 〖Gd〗_2 O_3 and 〖Gd〗_2 S_3. Under 365 nm UV illumination, the 〖In〗_2 S_3: 𝐺𝑑(1%) exhibits outstanding photodetector performance with a responsivity of 35.2×10^(-2) 𝐴/𝑊, an external quantum efficiency (EQE) of 82.1%, and a detectivity of 33.8 × 10^10 Jones. The device also shows excellent operational stability over 25 cycles, along with fast rise and decay times of 0.53 and 0.50 s, respectively. This research work paves the way for further doping strategies for improving the performance of 〖In〗_2 S_3 photodetectors, beyond state-of-the-art.
| Apply for student award at which level: | PhD |
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| Consent on use of personal information: Abstract Submission | Yes, I ACCEPT |