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The adsorption of CH2O on the surface of GaN monolayer doped with Ru and Rh has been investigated using density functional theory. The Negative adsorption energies of -2.096 and -1.629 eV were attained for the adsorption of CH2O on GaN monolayer doped with Ru and Rh respectively, implying energetically stable systems. The more negative the adsorption energy, the more favourable and stronger the adsorption. As such, the adsorption energies suggest that the adsorption of CH2O is more favourable on the surface of GaN monolayer doped with Ru. The binding distance between the CH2O gas and GaN monolayer doped with Ru and Rh were computed to be 2.040 Å (Ru-C) and 2.049 Å (Rh-C) respectively. The adsorption of CH2O on GaN monolayer doped with Ru and Rh occurs though the carbon atom.
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