Speaker
Description
Neutron Transmutation Doping (NTD)
This area explores the technique of using nuclear reactors to modify the electrical properties of semiconductor materials, particularly silicon, for high-performance electronic components. The project aims to optimize the neutron transmutation doping process at the Nuclear Energy Corporation of South Africa (NECSA) SAFARI-1 research reactor, focusing on the resistivity of the semiconductor material to produce the desired electrical characteristics in its fabrication.
NTD is the preferred method over chemical means for introducing dopants in semiconductors, especially if the application is for the manufacturing of small, discrete, low-power devices, etc. This will help with detailed plans for the irradiation process, including sample placement, neutron fluence requirements, and heat management. Conducting studies on the final electrical resistivity of the doped material and how it correlates with irradiation parameters is of importance.
| Apply for student award at which level: | Honours |
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| Consent on use of personal information: Abstract Submission | Yes, I ACCEPT |