UNISA-Brazil Symposium

Session

Session 3

28 Oct 2026, 12:40

Conveners

Session 3

• Sim Dlamini (UNISA)

14. Novelties in a dipolar Bose-Einstein condensate

Sadhan Adhikari (Sao Paulo State University)

28/10/2026, 12:40

Oral Presentation

We start the presentation with a brief introduction to the field of Bose-Einstein condensate (BEC) superfluid in an ultracold ultradilute gas of alkali-metal atoms. A BEC of dipolar atoms with a large dipole moment exhibits peculiar properties. A strongly dipolar BEC may have a crystalline structure on a lattice called a supersolid, where each site accommodates a droplet of a finite number of...

45. Vortices and Quantum Turbulence in Bose-Einstein Condensates: Stirring and Merging

Sabari Subramaniyan

28/10/2026, 13:10

Oral Presentation

Quantum turbulence (QT) - the quantum analogue of classical fluid turbulence - emerges from the complex dynamics of quantized vortices in Bose-Einstein condensates (BECs). In this talk, I will present our recent numerical investigations on vortex nucleation and the onset of QT in two distinct BEC systems driven by fundamentally different mechanisms.
First, I will discuss a quasi-2D dipolar BEC...

36. Lorentz-invariant phase space for three-body mesonic decays of the hypertriton

Emile Meoto (University of Buea)

28/10/2026, 13:30

Oral Presentation

The three-body mesonic decays of the hypertriton are studied through Dalitz plots of their Lorentz-invariant phase space. Events are generated with the Raubold--Lynch algorithm. It factorises each decay into two successive two-body decays through a virtual nucleon--deuteron subsystem, whose invariant mass is sampled over its full kinematic range. Exact relativistic kinematics, isotropic...

33. SiO2 interfacial layer for the improved photodiode properties of Silicon Schottky diodes.

Modisa Ntobeng (University of South Africa)

28/10/2026, 13:50

Oral Presentation

This study explores the use of a SiO2 interfacial layer in a Schottky diode to suppress unfavourable properties of the formed interface states. The deposition of the SiO2 layer improves the electrical properties of the device by reducing the interface state density. Before device fabrication, the following material characterisations, Raman, and scanning electron microscopy (SEM) were used, to...